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31 May 2005 InAs/(GaIn)Sb short-period superlattices for focal plane arrays
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Abstract
An infrared camera based on a 256x256 focal plane array for the Mid-IR spectral range (3-5 μm) has been realized for the first time with InAs/GaSb short-period superlattices. The detector shows a cut-off wavelength of 5.4 μm and reveals a quantum efficiency of 30%. The noise equivalent temperature difference (NETD) reaches 9.4 mK at 73 K with F/2 optics and 6.5 ms integration time. Excellent thermal images with low NETD values and a very good modulation transfer function are presented. Furthermore, a new method to passivate InAs/GaInSb superlattice photodiodes for the 8-10 μm regime is demonstrated. The approach is based on the epitaxial overgrowth of wet-etched mesa diodes using lattice matched AlGaAsSb. A complete suppression of surface leakage currents in small sized test diodes with 70 μm diameter is observed.
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Robert Rehm, Martin Walther, Johannes Schmitz, Joachim Fleissner, Frank Fuchs, Wolfgang Cabanski, and Johann Ziegler "InAs/(GaIn)Sb short-period superlattices for focal plane arrays", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.603420
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