31 May 2005 Novel high fill-factor, small pitch, reticulated InSb IR FPA design
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Proceedings Volume 5783, Infrared Technology and Applications XXXI; (2005); doi: 10.1117/12.603604
Event: Defense and Security, 2005, Orlando, Florida, United States
Abstract
The evolution of InSb Focal Plane Arrays (FPAs) at L-3 Communications Cincinnati Electronics (L-3 CE) has resulted in large format, high reliability, and high yields for 256x256, 640x512, 1Kx1K and even 2Kx2K formats using our patented front-side illuminated, reticulated pixel design. Baseline processes matured at 30um pitch and gradually were made producible at 25um pitch. Recent progress in process technology, specifically dry etch plasma processes and photolithography tools, has created a new set of processes/design capabilities which enable 15um pixel pitch FPAs, thus allowing us to develop a 15um pitch FPA with 4 times as many pixels, in the same foot print as the previous 30um pitch designs. We have developed a new 15um pitch, reticulated pixel design, implemented on a 512x512 format, which can then be sized into larger arrays, similar to the evolution that occurred on 30um pitch FPAs. As unit cell dimensions shrink by a factor of two, both the feature size and the alignment tolerances begin to limit optical fill factor. Addition of a novel micro-optic design, which optimizes signal collection to near 100% efficiency while maintaining near theoretical pixel MTF, will be presented.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Rawe, C. Martin, M. Garter, D. Endres, B. Fischer, M. Davis, J. Devitt, M. Greiner, "Novel high fill-factor, small pitch, reticulated InSb IR FPA design", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.603604; https://doi.org/10.1117/12.603604
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KEYWORDS
Staring arrays

Micro optics

Sensors

Silicon

Etching

Readout integrated circuits

Plasma etching

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