31 May 2005 Predicted performance of HgCdTe photodiodes for 15-25 μm detection
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Proceedings Volume 5783, Infrared Technology and Applications XXXI; (2005); doi: 10.1117/12.601941
Event: Defense and Security, 2005, Orlando, Florida, United States
Abstract
This paper reviews and assesses progress in back-illuminated P-on-n photovoltaic HgCdTe detector technology, grown by two-layer Liquid Phase Epitaxy on CdZnTe substrates, for applications at wavelengths beyond 15 μm in a new generation of spaceborne multispectral instruments for remote sensing. We review data that demonstrate the feasibility of useful cutoff wavelengths as long as 17.5 μm. We recommend that LPE photovoltaic HgCdTe technology be extended to the 20-25 μm wavelength region for single elements and arrays for NASA remote-sensing applications.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. B. Reine, S. P. Tobin, P. W. Norton, P. LoVecchio, "Predicted performance of HgCdTe photodiodes for 15-25 μm detection", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.601941; https://doi.org/10.1117/12.601941
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KEYWORDS
Mercury cadmium telluride

Liquid phase epitaxy

Photodiodes

Photovoltaics

Diffusion

Staring arrays

Quantum efficiency

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