31 May 2005 Progress in negative luminescent Hg1-xCdxTe diode arrays
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Negative luminescent devices, which absorb more light than they emit when reverse biased, have a large number of applications including, reference planes for thermal cameras, infrared (IR) sources and IR scene projection. This paper describes devices made from mercury cadmium telluride grown on silicon substrates, focusing on large area arrays with reduced operating powers. Novel growth structures and device designs have been investigated in order to reduce the series resistance. Results from the first dry etched, LW MCT on Si, 1 cm2 device with optical concentrators are presented.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mary K. Haigh, Mary K. Haigh, Geoffrey R. Nash, Geoffrey R. Nash, Neil T. Gordon, Neil T. Gordon, James Edwards, James Edwards, Alan J. Hydes, Alan J. Hydes, David J. Hall, David J. Hall, Andrew Graham, Andrew Graham, Jean Giess, Jean Giess, Janet E. Hails, Janet E. Hails, Tim Ashley, Tim Ashley, } "Progress in negative luminescent Hg1-xCdxTe diode arrays", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.603292; https://doi.org/10.1117/12.603292


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