19 May 2005 Low noise Sb-heterostructure diode detectors for W-band imaging arrays without RF amplification
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Abstract
The figure of merit for RF detectors, noise-equivalent power (NEP), is determined by the noise divided by the sensitivity. Thus, the challenge is to design a diode structure that has low junction resistance while maintaining a large nonlinearity. This work presents sensitivity and noise measurements for Sb-heterostructure backward diodes with varying barrier thicknesses and cross-sectional areas. Nominal diode areas are 2x2mm2 and 3x4mm2 with 15Å and 20Å barriers. The best NEP measured to date is 1.19 pW/rtHz at 36.5 GHz.
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Harris P. Moyer, Harris P. Moyer, Tsung-Yuan Hsu, Tsung-Yuan Hsu, R. L. Bowen, R. L. Bowen, Y. K. Boegeman, Y. K. Boegeman, P. W. Deelman, P. W. Deelman, S. Thomas, S. Thomas, Andrew T. Hunter, Andrew T. Hunter, Joel N. Schulman, Joel N. Schulman, Arttu Luukanen, Arttu Luukanen, Erich N. Grossman, Erich N. Grossman, } "Low noise Sb-heterostructure diode detectors for W-band imaging arrays without RF amplification", Proc. SPIE 5789, Passive Millimeter-Wave Imaging Technology VIII, (19 May 2005); doi: 10.1117/12.606730; https://doi.org/10.1117/12.606730
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