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19 May 2005 Low noise Sb-heterostructure diode detectors for W-band imaging arrays without RF amplification
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Abstract
The figure of merit for RF detectors, noise-equivalent power (NEP), is determined by the noise divided by the sensitivity. Thus, the challenge is to design a diode structure that has low junction resistance while maintaining a large nonlinearity. This work presents sensitivity and noise measurements for Sb-heterostructure backward diodes with varying barrier thicknesses and cross-sectional areas. Nominal diode areas are 2x2mm2 and 3x4mm2 with 15Å and 20Å barriers. The best NEP measured to date is 1.19 pW/rtHz at 36.5 GHz.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harris P. Moyer, Tsung-Yuan Hsu, R. L. Bowen, Y. K. Boegeman, P. W. Deelman, S. Thomas III, Andrew T. Hunter, Joel N. Schulman, Arttu Luukanen, and Erich N. Grossman "Low noise Sb-heterostructure diode detectors for W-band imaging arrays without RF amplification", Proc. SPIE 5789, Passive Millimeter-Wave Imaging Technology VIII, (19 May 2005); https://doi.org/10.1117/12.606730
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