18 May 2005 Grating gated FETs as narrowband tunable terahertz detectors
Author Affiliations +
Abstract
Grating gated field effect transistors (FETs) are potentially important as electronically tunable terahertz detectors with spectral bandwidths of the order of 50 GHz. Their utility depends on being able to 1) use the intrinsic high speed in a heterodyne mixer or 2) sacrifice speed for sufficient sensitivity to be an effective incoherent detector. In its present form the grating gated FET will support IF frequencies up to ~10 GHz, an acceptable bandwidth for most heterodyne applications. By separating the resonant plasmon absorption from the responsivity mechanism, it appears that a tuned, narrow terahertz spectral band bolometer can be fabricated with NEP ~ 10-11 watts/√Hz and response times of the order of 30 msecs, useful in a passive multispectral terahertz imaging system.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric A. Shaner, Eric A. Shaner, Michael C. Wanke, Michael C. Wanke, Mark Lee, Mark Lee, John L. Reno, John L. Reno, S. James Allen, S. James Allen, Xomalin G. Peralta, Xomalin G. Peralta, } "Grating gated FETs as narrowband tunable terahertz detectors", Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); doi: 10.1117/12.603497; https://doi.org/10.1117/12.603497
PROCEEDINGS
7 PAGES


SHARE
Back to Top