18 May 2005 Terahertz-frequency quantum oscillator operating in the positive differential resistance region
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The traditional implementation of resonant tunneling diodes (RTD) as a high-frequency power source always requires the utilization of negative-differential resistance (NDR). However, there are inherent problems associated with effectively utilizing the two-terminal NDR gain to achieve significant levels of output power. This paper will present a new design methodology where resonant tunneling structures (RTS) are engineered to exhibit electronic instabilities within the positive-differential-resistance (PDR) region. As will be demonstrated, this approach utilizes a microscopic instability that alleviates the need to reduce device area (and therefore output power) in an effort to achieve low-frequency stabilization.
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Peiji Zhao, Peiji Zhao, Dwight Woolard, Dwight Woolard, Matthew Lasater, Matthew Lasater, C. T. Kelley, C. T. Kelley, Robert Trew, Robert Trew, } "Terahertz-frequency quantum oscillator operating in the positive differential resistance region", Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); doi: 10.1117/12.602727; https://doi.org/10.1117/12.602727

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