21 February 2005 New structure of photoreceivers for optic communications
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Proceedings Volume 5822, Information Technologies 2004; (2005) https://doi.org/10.1117/12.612195
Event: Information Technologies 2004, 2004, Chisinau, Moldova
New p-i-n photodiodes on the basis of InP-InGaAs-InGaAsP heterostructures for optic communications, possessing original characteristics, are presented in the paper. Their specific photosensibility was achieved by placing the p-n junction in InGaAsP frontal layer near the interface with InGaAs active layer. The photosensibility of realized photodiodes can be controlled in spectral range 1.3-1.6 &mu;m by reverse voltage. For reverse voltage less than a threshold one Urev < Uthr between frontal and active layers there is a potential barrier of about 0.4 eV for holes generated in active layer and they don’t participate in photocurrent. For voltage Urev > Uthr the boundary of space charge region extends into the InGaAs active layer and the potential barrier disappears. Thus, charge carriers generated in active layer are easy separated and a photosensibility in spectral range 1.3-1.65 &mu;m appears for Urev > Uthr. These photodiodes haven’t analog and can be successfully used in many fields of functional optoelectronics for receiving, decoding and processing the signals transferred by optic fibers.
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Valerian V. Dorogan, Tatiana S. Vieru, Andrei V. Dorogan, "New structure of photoreceivers for optic communications", Proc. SPIE 5822, Information Technologies 2004, (21 February 2005); doi: 10.1117/12.612195; https://doi.org/10.1117/12.612195

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