Paper
21 February 2005 Record and reading of optical information in barrier structures on the chalcogenide glass base
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Proceedings Volume 5822, Information Technologies 2004; (2005) https://doi.org/10.1117/12.612216
Event: Information Technologies 2004, 2004, Chisinau, Moldova
Abstract
Electrophotographic spectroscopy, low-frequency capacity and photoconductivity methods were applied to investigate density of the located states in a mobility band of amorphous semiconductors layers As2S3 II As2Se3. Quasicontinuous and strictly localized states of donor and acceptor types are found. The explanation of this is offered on the basis of existence of metastable states, which are created under light, X-Ray and electron excitation. On the basis of the mentioned materials barriers structures are created and elaborated devices for record and reading of optical information in them.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor I. Verlan "Record and reading of optical information in barrier structures on the chalcogenide glass base", Proc. SPIE 5822, Information Technologies 2004, (21 February 2005); https://doi.org/10.1117/12.612216
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