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2 June 2005 Controlled growth of arrays of straight and branched carbon nanotubes
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Arrays of interconnect-type carbon nanotubes (CNTs) have been grown over etched silicon substrates. These tubes are grown over trenches ranging from 200-1000 nm in width. Through control of initial parameters such as trench size, catalyst concentration and the initial parameters for the chemical vapour deposition (CVD) of the tubes (gas flow rates, gas flow times and reaction temperature) dense arrays of CNTs spanning the trenches have been formed, with densities in the region of 1.6 interconnects per micron of trench length. High proportions of branch-structure CNTs have been noted within these arrays. The cleaved sections of silicon substrate are simply treated by drop-casting and drying catalyst-containing solution prior to CVD treatment. The density of the resultant arrays can be controlled through the density of the catalyst solution.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rory W. Leahy, Emer Lahiff, Andrew I. Minett, and Werner J. Blau "Controlled growth of arrays of straight and branched carbon nanotubes", Proc. SPIE 5824, Opto-Ireland 2005: Nanotechnology and Nanophotonics, (2 June 2005);

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