3 June 2005 Broad band infrared spectroscopy of grooved silicon
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Proceedings Volume 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks; (2005); doi: 10.1117/12.619463
Event: OPTO-Ireland, 2005, Dublin, Ireland
Abstract
Grooved silicon (gr-Si) structures with a period of few micrometers, which were formed by anisotropic etching of (110) Si wafers, have been investigated by means of broad band infrared (IR) and submillimeter transmission spectroscopy. In the spectral region of 50-1000 μm the results are well explained by an effective medium model, which predicts a strong birefringence with a difference between refractive indices for ordinary and extraordinary beams to be about 0.73-0.77. The IR transmission of gr-Si in the range from 1 to 30 μm is strongly influenced by light scattering. The experimental results measured in the region 1-5 μm can be understood in the terms of the geometric optics.
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E. Yu. Krutkova, V. Yu. Timoshenko, L. A. Golovan, P. K. Kashkarov, E. V. Astrova, T. S. Perova, B. P. Gorshunov, A. A. Volkov, "Broad band infrared spectroscopy of grooved silicon", Proc. SPIE 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, (3 June 2005); doi: 10.1117/12.619463; https://doi.org/10.1117/12.619463
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KEYWORDS
Silicon

Transmittance

Dielectrics

Refractive index

Dielectric polarization

Infrared spectroscopy

Birefringence

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