3 June 2005 Device design of 1.3μm AlGaInAs-InP narrow strip structure for self-pulsation operation
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Abstract
A complete design of 1.3 μm AlGaInAs/InP narrow stripe semiconductor lasers for self-pulsating operation is realised by using a 2×1D simulation model. This numerical model is based on the effective index method and self-sustained pulsation mechanism in the narrow stripe lasers. The self-pulsation effect is enhanced by the self focusing and defocusing of the optical field which is dependent on the modification of carrier densities in the active region. The resulting AlGaInAs-InP device with compressively strained multi-QWs showed self-pulsation frequency of 3.5 GHz.
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Guan Hong Wu, Guan Hong Wu, Canice G. O'Brien, Canice G. O'Brien, Woon-Ho Seo, Woon-Ho Seo, John F. Donegan, John F. Donegan, } "Device design of 1.3μm AlGaInAs-InP narrow strip structure for self-pulsation operation", Proc. SPIE 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, (3 June 2005); doi: 10.1117/12.605139; https://doi.org/10.1117/12.605139
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