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3 June 2005 Structural and optoelectronic properties of sputtered copper (I) chloride
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Abstract
Copper (I) Chloride is a wide band gap semiconductor with great potential for silicon-based optoelectronics due to the fact that is closely lattice matched with silicon. This work examines the deposition of CuCl thin films by magnetron sputtering on silicon and glass substrates. Film structural and morphological properties are studied with X-ray diffraction and atomic force microscopy. Optical absorbance and luminescence spectra of CuCl thin films are analysed in order to study the excitonic features. The influence of deposition process parameters and post annealing on the film properties are also reported.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gomathi Natarajan, Lisa O'Reilly, Stephen Daniels, David C. Cameron, Patrick J. McNally, Olabanji Lucas, Alec Reader, Anirban Mitra, and Louise Bradley "Structural and optoelectronic properties of sputtered copper (I) chloride", Proc. SPIE 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, (3 June 2005); https://doi.org/10.1117/12.605100
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