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3 June 2005 The use of wide-bandgap CuCl on silicon for ultra-violet photonics
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Abstract
γ-CuCl is a wide-bandgap (Eg = 3.395eV), direct bandgap, semiconductor material with a cubic zincblende lattice structure. Its lattice constant, aCuCl = 0.541 nm, means that the lattice mismatch to Si (aSi = 0.543 nm) is <0.5%. γ-CuCl on Si-the growth of a wide-bandgap, direct bandgap, optoelectronics material on silicon substrates is a novel material system, with compatibility to current Si based electronic/optoelectronics technologies. The authors report on early investigations consisting of the growth of polycrystalline, CuCl thin films on Si (100), Si (111), and quartz substrates by physical vapour deposition. X-ray diffraction (XRD) studies indicate that CuCl grows preferentially in the <111> direction. Photoluminescence (PL) and Cathodoluminescence (CL) reveal a strong room temperature Z3 excitonic emission at ~387nm. A demonstration electroluminescent device (ELD) structure based on the deposition of CuCl on Si was developed. Preliminary electroluminescence measurements confirm UV light emission at wavelengths of ~380nm and ~387nm, due to excitonic behaviour. A further emission occurs in the bandgap region at ~360nm.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. O'Reilly, G. Natarajan, P. J. McNally, S. Daniels, O. F. Lucas, A. Mitra, M. Martinez-Rosas, L. Bradley, A. Reader, and D. Cameron "The use of wide-bandgap CuCl on silicon for ultra-violet photonics", Proc. SPIE 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, (3 June 2005); https://doi.org/10.1117/12.602729
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