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22 April 2005 Growth of anatase TiO2 thin films by laser ablation
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Proceedings Volume 5830, 13th International School on Quantum Electronics: Laser Physics and Applications; (2005) https://doi.org/10.1117/12.617327
Event: 13th International School on Quantum Electronics: Laser Physics and Applications, 2004, Bourgas, Bulgaria
Abstract
Thin TiO2 films were grown on (001) SiO2 substrates using excimer KrF laser ablation of ceramic targets. The influence of deposition temperatures at fixed oxygen pressure of 10 Pa on the crystal and optical properties of the films was investigated. Structural characterisation by X-ray diffraction and Raman spectroscopy shows preferential crystallization of the anatase TiO2 films were obtained at high temperatures of 500 and 600 °C, respectively. Optical transmission as high as 92% in the visible spectral region was measured for films grown at temperatures higher than 400 °C. The refractive index and the thickness of the films measured by m-line spectroscopy shows the highest values of 2/41 and 250 nm, respectively, at deposition temperature of 600 °C.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nadya E. Stankova, Petar A. Atanasov, Anna O. Dikovska, Ivan G. Dimitrov, Gabriel Socol, and Ion N. Mihailescu "Growth of anatase TiO2 thin films by laser ablation", Proc. SPIE 5830, 13th International School on Quantum Electronics: Laser Physics and Applications, (22 April 2005); https://doi.org/10.1117/12.617327
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