22 April 2005 Properties of pulsed laser deposited Bi2(m+n)Te3 thin films
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Proceedings Volume 5830, 13th International School on Quantum Electronics: Laser Physics and Applications; (2005) https://doi.org/10.1117/12.617336
Event: 13th International School on Quantum Electronics: Laser Physics and Applications, 2004, Bourgas, Bulgaria
Abstract
The Bi2Te3 thin films with various thicknesses were prepared by laser ablation in vacuum using the KrF excimer laser. The energy density of laser was set at 5 J/cm2 (resp. at 2 J/cm2 in the second experiment). The substrate temperature was held at 410 °C. The influence of thickness on the Hall mobility and conductivity at room temperature is presented.
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Martin Pavelka, Martin Pavelka, Radek Zeipl, Radek Zeipl, Miroslav Jelinek, Miroslav Jelinek, Jarmila Walachova, Jarmila Walachova, Vaclav Studnicka, Vaclav Studnicka, } "Properties of pulsed laser deposited Bi2(m+n)Te3 thin films", Proc. SPIE 5830, 13th International School on Quantum Electronics: Laser Physics and Applications, (22 April 2005); doi: 10.1117/12.617336; https://doi.org/10.1117/12.617336
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