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22 April 2005 Structural and optical properties of thin indium oxide films produced by pulsed laser deposition
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Proceedings Volume 5830, 13th International School on Quantum Electronics: Laser Physics and Applications; (2005) https://doi.org/10.1117/12.617319
Event: 13th International School on Quantum Electronics: Laser Physics and Applications, 2004, Bourgas, Bulgaria
Abstract
Thin indium oxide (In2O3) films were grown on (001) SiO2 by pulsed laser deposition techniqe at oxygen pressure from 1 to 20 Pa and substrate temperature between 100 and 500 °C from ceramic targets. The structural and optical properties of the films were investigated as a function of the growth conditions: oxygen pressure and substrate temperature. Polycrystalline In2)O3 films with prefer3ential (111) orientation were produced at oxygen pressure higher than 5 Pa and temperature higher than 100 °C. The Raman spectra confirm the cubic structure of the films. The films have transparency between 85% and 92% in the 400-2400 nm spectral range. The lowest optical waveguide loss measured is 9 dB/cm for the film grown at the optimum conditions: P(O2) = 10 Pa and Ts = 300 °C.
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Todorka J. Stanimirova, Petar A. Atanasov, Anna O. Dikovska, Nadya E. Stankova, and Svetlen H. Tonchev "Structural and optical properties of thin indium oxide films produced by pulsed laser deposition", Proc. SPIE 5830, 13th International School on Quantum Electronics: Laser Physics and Applications, (22 April 2005); https://doi.org/10.1117/12.617319
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