Hitherto two families of multielement detectors have been used for infrared applications scanning systems (first generation) and staring systems (second generation). Third generation systems are being developed nowadays. In the common understanding third generation JR systems provide enhanced capabilities like larger number of pixels higher frame rates better thermal resolution as well as multicolour functionality and other on-chip functions. In the class of third generation infrared photon detectors two main competitors HgCdTe photodiodes and AlGaAs/GaAs quantum well infrared photoconductors (QWIPs) are considered. However in the long wavelength infrared (LWIR) region the HgCdTe material fail to give the requirements of large format two-dimensional (2D) arrays due to metallurgical problems of the epitaxial layers such as uniformity and number of defected elements. A superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an attractive to HgCdTe with good spatial uniformity and an ability to span cutoff wavelength from 3 to 25 tm. The recently published results have indicated that high performance middle wavelength infrared (MWIR) InAs/GaInSb superlatice focal plane arrays can be fabricated. Based on these very promising results it is obvious now that the antimonide superlattice technology is competing with HgCdTe dual colour technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing.

Work is devoted to the decision of extremely actual problem: to development of physicotechnical bases and a design of microprocessors over fast processing the information and an identification of the image, received with matrix multiplexers. Processing of spatially distributed information acting from matrix multiplexers, is made in a parallel mode with the help vacuum over tiny electron beam cells, commensurable with elements of a photo of a matrix. Use of such processors will allow to refuse bulky computers on semiconductors, and considerably to reduce expenses of energy. For example, operation of an identification of an image is carried out 1000 times faster, than with the help of modern computers.

The minimal value ofthe noise equivalent temperature difference AT the specified effective value ofthe instantaneous field of view are given for the non-scanning thermal imaging devices which use the photon cooled or thermal uncooled focal plane arrays acting in the background limited mode.

On the basis of the analysis of the results of the experimental data according to the estimation of the distance detection recognition and identification of the figure of man by means of the thermal imaging device there fixed the values of the specified Johnson criteria necessary for the rational design ofsuch devices and the prediction of their range.

The results of the experimental investigations of the daily of the radiation contrasts of soldiers in camouflage in the ranges 7,6...11,8 μm and 1,9...5,5 μm in the summer-autumn season in different background-target situations are given in this report. The difference of the daily contrast change of the soldiers' figures in conditions of the natural air-cooling and inside the buildings is marked here. The most stable values of the radiation contrast of the fragments of the soldier silhouette are shown in this report.

The results of development researches and tests of the 4x288 focal plane array (FPA) for a spectral range 8-12 microns are given. The cooled photoreception module of the FPA represents hybrid assembly of a matrix photosensitive element based on liquid phase epitaxy (LPE) mercury-cadmium-telluride (MCT) photodiodes and cooled silicon readout integrated circuit (ROIC). Connection of the MCT and ROIC is carried out by means of In bumps. Cooled silicon readout circuits have been made by n-MOS technology with no TDI stages at focal plane. For 11.5 μm cutoff wavelength detectivity is higher then 1x10¹¹ cmW^-1Hz^1/2 for 4x288 FPA with four TDI elements.

Indium antimonide MWIR Focal Plane Array (FPA) have been developed and investigated. FPA consists of two dimensional anys of InSb photodiodes bonded by indium bumps with CMOS-multiplexer and Split-Stirling cooler. Noise equivalent power NEP≈7•10^-13 W/pixel and dynamic range 60÷70 dB at frame frequency (800÷1000) Hz.

The technology of high-quality uncooled focal plane arrays (FPA) fabrication has been developed. Simple and cheap sol-gel technology of thermosensitive vanadium oxide layers preparation is underlain in its basis. Uncooled 160x120 and 320x240 FPA for 8-14 microns spectral range have been fabricated. The noise equivalent temperature difference less than 8OmK has been achieved at frame rate 60 Hz for 160x120 FPA and at use of optics with 1/1 relative aperture.

Current state of development of silicon cooled array JR detectors (FPA) with photosensitive elements on Shottky barrier (SB) and imagers based on them completed lately at NRI "E1ectron" is under consideration. The most important parameters of widespectrum monolithic FPA with 256x 256 elements on PtSi (1.2-5.5 μm) and IrSi (1.2-10.5 μm) and also FPA with 512x512 elements on PtSi are presented. The results of laboratory and field tests of JR cameras with use of developed SB FPA demonstrated correctness of the chosen direction of work allowed to get experience in SB FPA exploitation and found out the ways of their perfection in application to work with small size objects. The factors limiting further improvement of threshold sensitivity of developed SB FPA at work on small details of image were examined. The specific requirements to SB FPA operating in multispectrum JR systems for small size object detection are discussed. It is noted that the development of the large format SB FPA with improved sensitivity in monolithic version based on Si using modern VLSJC technology and new technology of manufacture and treatment of multilayer thin film structures of metal and semiconductor silicides are perspective.

Multielement photodetectors have a considerable spread of sensitivity between the elements and that leads to the noise appearance on the output image due to the difference of output elements voltage at similar parameters of irradiated signal. In order to exclude the pointed image defects they used different methods of channel sensitivity equalization. At that we should notice that the efficiency of such equalization depends in many respects on the parent voltage sensitivity range of multielement photodetector.

In an effective mass approximation a calculation of an energy spectrum of quantum dots (QD) is carried out. Quantum dots of an spherical and cylindrical forms (the height is much less then radius-disc or tablet nanocluster) are analyzed. Numerical constants of Ge-Si heterostructure are used in calculation. Difference of hole effective mass in Ge and Si is taken into account. In envelope wave function approximation an estimation of photoionization cross-section of the pherical cluster ground state is carried out. For a tablet cluster estimation of matrix elements ratio of ground state photoionisation by electro-magnetic radiation with E vector along and perpendicular cluster axis is carried out.

The results of realization ofthe scientific and technical project on the development of the device of high-precision pointing of laser radiation-the pointing channel-are presented in this report. You can find here the description ofthe device design its structural and optical schemes and operation algorithm. The testing technique of an experimental sample is stated the testing results are presented.

Properties of n⁺-on-p HgCdTe photodiode with graded p-P heterojunction at temperature 77 K are analysed numerically by solving three-dimensional diffusion equation in cylindrical geometry. Dependences of photodiode's parameters from composition difference Δx and position of p-n junction in relation to heterojunction are presented. Elimination of lateral collection of diffusion current with increasing of Δx is shown.

Currently the number of foreign companies manufacturing the charge-coupled devices (CCD) comes to many tens, and manufacture of CCDs for different applications exceeds 10 million pieces per year. With the purpose to provide competition ability of our CCDs our enterprise has concentrated efforts on the manufacture of customized CCDs designed either for military or civilian applications. The main trends in the CCD developments are presented.

A single-cell photo sensor with photoelectrical parameters being close to the theoretical ones for 0.19-0.28 mkm range has been developed. No sensitivity to visible light is presented. Under a high energy visible light range illuminance (threshold irradiance illuminance >1•10^-3 W/cm²) photoactivation of trap centers with energy of 1.6-3 eV in forbidden band of diamond is observed. The photoactivation causes minor photosensitivity in visible light range which goes down within 10 minutes after high energy visible light illuminance is ceased. Sensitivity threshold of the sensor under direct sunlight is not lower than 1.3•10^-5 W/Hz^1/2. In 0.19-0.28 mkm range under λ_max=0.225 mkm sensitivity threshold of the sensor is close to the theoretical value =(1-2)•10^-14 W/Hz^1/2. The sensor has built-in preamplifier (amplification coefficient = 100). The preamplifier is set in so-called "cold area" of the sensor. No additional cooling is required. Physical principles of photo receiving process on natural diamond have been studied. Perspectives of development of a multi-cell natural diamond based sensor have been evaluated.

This work is devoted to a heat radiation detector the electrical connections of p- and n-type branch which one are made by the way hot junction a cold junction i.e. ++,--. There are also discussed the results of thermoelectric properties of Ag₁₉Sb₂₉Te₅₂ suggested as a thermoelectric stuff for this receiver.

The comprehensive investigation of transport phenomena such as the electrical and thermal conductivity thermal power Hall coefficient transverse Nernst-Ettingshausen effect in InSb-FeSb eutectic composition in the range of 80 to 450K and at different mutual directions ofthe current thermal flow magnetic field and metallic phase inclusions has been conducted. It has been revealed that under certain conditions the metallic phase plays the short-circuit role which leads to an anisotropy of kinetic coefficients. Main characteristic parameters: the specific sensitivity figure of merit figure of merit factor detecting ability and transducer response time of transducers based on the thermomagnetic Nernst-Ettingshausen effect have been appreciated. It has been shown that the InSb-FeSb eutectic composition can serve as a material for the thermal radiation detector fabrication and that the optimal operating conditions ofthe detector are T=300K and B=0,6 T.

The design and a manufacturing process of SPRITE-photodetectors on the basis ofthe CdHg1Te epiflims growth in beforehand created furrows of the substrate is offered. Advantages of the offered design are shown in comparison with existing both in technological and in design aspects.

The calculation of dependence photoelectric parameters of the uncooled photoelectromagnetic (PEM) detector of infrared range of spectrum on the basis of monocrystals Cd_xHg_1-xTe (x=0,2) from the level of an acceptor doping of semiconductor material was carried out. It is shown that the optimum acceptor doping allows to increase essentially both the voltage response and specific detectivity of photodetector. The modified construction of the PEM detector permitting to increase more its voltage response is represented. The photoelectric parameters of manufactured PEM detector for middle range of IR-spectrum of 3-7 μm with a maximum of responsivity near 6 μm are given.

Pyrovidicons of a new generation with high responsivity and improved vibration-resistance for spectral range 8-14 micron were developed: L1513 and LI 514 ("Cover"). The characteristics of the developed pyrovidicons are close to the parameters of the foreign solid-state array detectors and do not have analogues in Russia and abroad.

Improvement of equipment characteristics, using photodetectors, first of all is connected with increasing of the photocathode sensitivity and possibility to operate in new spectral ranges.

The results of the developments of small-sized cathode-ray tubes (CRTs) with entirely electrostatic beam control and small-sized CRT displays (CRTDs) are discussed. The CRTD can be used as a viewfinder in the cameras for special applications or as a complete hand-held device. Specifications for the CRT and the CRTD are presented.

Peculiarities of photocathode heterostructures design which allow to shift "blue" boundary of photocathode spectral response to short-wave region of spectra are determined. The structures, been grown with "buffer" layer wit thickness ~100 ⊕ allow to shift spectral response to 0,36 μm at integral sensitivity value on level 1600-1800 μA/lm.

The software which allows calculating signal to noise ratio amplification factor shading error visual quality modulation transfer function is developed. It appreciably decrease measurement's time and allows to lower risk of errors appearance. With the help of this software the distance between parallel sides hexahedron (about 700 microns) is received. Average grid linewidth is measured. Reduction ofbrightness by lines ofa grid is 10-20%. The dependence of a line width of "grid" from photocathode intensity is received.

In this paper the life time of the 3^d generation I² without IBF dependence upon residual electron-stimulated outgassing (RESO) from SBA is presented. The calculation of RESO level is made which insures the 3^d generation I² without ion-barrier film (IBF) efficiency. The high cleaning of SBA of the 3^d generation I² technology with RESO level monitoring is described.

There heterostructure arrangement on base of InGaAs compound is presented, that allows extending photocathode spectral response to IR region. Technology process of I² with photocathode assembly on the base of InGaAs is discussed. The best sample of the I² integral sensitivity 750 mkA/lm, spectral sensitivity at λ=1,06 mkm-2, mA/Bt.

The reasons are determinated, that limit sensitivity level of multialkaline photocathodes, formed in UHV chambers, that are comprised "transfer" setup assembly for assembly of super 2+ generation image intensifiers tubes (I²). Analysis of surface and underlying glass layers are performed. On the base of this analysis the methods of cleaning and closing destroyed glass layer to prevent photocathode deterioration are posed. This allows to increase mean level of integral sensitivity to 600 μA/lm.

In this report the new developed is described, essence of that is improvement of optical scheme of night vision goggles, introductions I² with twister. The result of this improvement is device entire mass dimensions decrease.

Developed science-based concept of multialkaline photocathode preparation in UHV chambers is developed. On this chamber base and from standard industrial equipment for image intensifier tube (I²) 2⁺ generation used in <<Katod>> progressive "transfer" setup with the use of photocathodes performed in UHV chambers has been created.

In GaAs, InGaAs, InGaP-photocathodes for I² to bond HES with input glass windows vacuum thermodiffusion welding (TDW) is used. By existing technology of TDW some problems are appeared, that connected with fragility, deformation, thermic matching of materials, also with thermic stresses in welded materials. In this report describe the methods of concrete problem-solving that attend TDW is described.

State and summary of night vision system with image intensifiers (hereinafter I²) technology developed by JSC "Katod" are reviewed. Improvements in I² technology, achieved by JSC "Katod" may be divided into three full based directions: unfilmed I², I² with 25 mm photocathode diameter and halo-free I² with automatic gate. Advantages of night vision system (hereinafter NVS) achieved with use of the new technologies presented.

The basic physical-and-chemical aspects of influence of microchannel plate working surface quality on a complex of parameters determining a technological level quality and reliability of plates are considered in this paper. A radically new approach to technology consisting in directional change of composition and properties of channel wall material directly in the course ofMCP manufacturing process is presented.

The kinetics of electron processes in the vidicons' phototargets based on semiconductor-insulator structures of narrow-gap semiconductors in view of charge draining in the insulator layer and nonequilibrium depletion region in the semiconductor layer is addressed. Integration time, threshold sensitivity and phototarget resolution for different levels of input radiation are estimated.

The mathematical model, algorithm and calculation results of a convection current in the channel of a microchannel plate represented in view of reaction channel to entrance current. Methods of the theory of electric circuits are used. Calculation in static and in transition modes is possible. The model allows to install interrelation between the mode of an amplification and parameters of the resistive and emissive MCP layers.

The problem of development production and application of small pore microchannel plate (MCP) in image intensifier tubes has become very urgent in recent years. As far as VTC Baspik parameters are concerned they do not rank below the present-day modern foreign plates. The requirements to small pore MCP for modern image intensifier tubes of Generations III and IV are determined in this paper. It is shown that realization ofthese requirements is possible within the new version ofthe basic technological way of MCP manufacturing.

Charge carriers diffusion length needs to be exactly calculated in p-type HgCdTe (MCT) epitaxial layers to design focal plane array (FPA) with small crosstalk and high performance. The mathematical model and the computing program to determine the minority carriers diffusion length from experimental data of photodiode spatial signal response versus the optical spot position along the pixel have been developed. The correlation of diffusion length data with other methods data has been analyzed.

The paper theoretically investigates the peculiarities of graded-gap photodiodes in which the band gap linearly increases from the metallurgical boundary of p-n junction. On the basis of derived analytical expression for the photocurrent the spectral distribution of quantum efficiency of photoconversion and its dependence on the band gap gradient and surface recombination velocity are analysed. Numerical calculations are carried out as applied to a thin layer photodiode based on the CdHgTe graded-gap solid solution. The advantages of this type of graded-gap photodiodes over their homoband analogues are discussed.

Investigations of Hg_0.22Cd_0.78Te based photoconductive elements have been carried out in the Electron Beam Induced Current (EBIC) mode of the scanning electron microscope. Distributions of current induced by a focused e-beam in the elements are measured as a function of beam position. Fitting the measured distributions by calculated ones allows to estimate values of diffusion length and of recombination velocity on the lateral edges of elements associated with defects induced due to ion milling. It is shown that besides the diffusion length and recombination velocity measurements such investigations allow to reveal the extended recombination defects of micron size.

The experimental results of photoelectric and optic properties on the gallium contained (N_Ga=O,5÷1 at%), Pb_1-xMn_xTe epitaxial films with thickness d=1÷5 μm, obtained by a molecular beam condensation method on BaF₂ (111) substrate have been presented. The films have been photosensitivity at T=77 K and spectral maximum of photosensitivity were displacement in the short-wave length of spectrum with introduction Mn which are introduced to some increasing of the gap width in Pb_1-xMn_xTe. Analogous phenomenon have been observed by investigating of absorption optic edge bound also by the increase gap width. The magnitudes of gap width determined by spectral dependence of absorption edge and photoconductivity are in the satisfactorily condition.

Photosensitive isoperiodical heterojunctions (HJ) Pb_1-xSn_xSe(In)/PbSe_1-xS_x were obtained in the ultrahigh vacuum (≤3÷5•10^-7 Pa) at quasi-equilibrium conditions by the method of the "hot wall" in the unified technological cycle on substrates BaF₂. In structural relation HJ components are ideally coordinated pair for the epitaxy. Volt-ampere and spectral characteristics of the HJ were recorded. Straight branch of the volt-ampere characteristics satisfies to the exponential law J=J₀exp (eU/βκT) at small displacements. At 77 K the coefficient β changes in the interval 1.5÷2 that is typical for the generation-recombination mechanism of the current leakage through the region of the space charge. Maximum photosensitivity was observed at λ_max=12.0 μm. The increase of the temperature ofthe HJ manufacture leads to the shift of the photosensitivity maximum to the short-wave region that is explained by the noticeable tin diffusion from the ground layer to the growing layer and as a result the HJ acquires characteristics of the varyzone structure.

In the present work the photochemical reaction in Cd_1-xZn_xS(Se) films considered depending on technological modes of their deposition and heat treatment (HT). In Cd_1-xZn_xS(Se) films the formation of Cd_i-Cd_i, Zn_i-Zn_i, V_Se-Zn_i etc. associations provides occurrence of optical active electronic states carried in an interval of energy 0.3-0.6 eV allows using of a Cd_1-xZn_xS(Se) films for creation on their basis non-cooled photodetectors in the IR-range. At illumination by light of λ=0.95 μm were observed anomalous photoconductivity and photomemory phenomenon connected with existence in them defects with metastable states which concentration can be operated depending on structure deposition and heat treatment (HT) mode and limits by tunnel transitions of no basic located electrons and holes between r- and s-centres. In Cd_1-xZn_xS(Se) films after HT on air during 10-15 minutes was observed the photochemical reaction with activation energy of 0.17-0.21 eV representing disintegration process of donor-acceptor pairs consisting of the r-centres and the Cd_i, Zn_i donors at illumination with light of λ=1.25 μm and caused by precipitation conditions and HT.

By the method of landing to optical contact isotype n-InSe< REE >/n-CuInSe₂ heterojunctions with percentage of introduced impurity N_REE=0; 10^-5; 10^-4; 10^-3; 10^-2 and 10^-1 at. % rare-earth elements (REE) of gadolinium, holmium and dysprosium have been created. Their photoelectric properties in photoconductivity, photo-e.m.f. and photovoltaic modes have been investigated at different orientations of incident light relative to contacting components and temperatures (at 77 and 300 K). Appreciable dependence of the basic photo-electric characteristics of investigated structures on N_REE have been found out and mechanisms for their explanations have been offered.

p-Si/n-Cd_1-xZn_xS heterojunction are prepared by the electrodeposition method. Electrical and photoelectrical measurements have been carried out on heterojunctions having varying Cd_1-xZn_xS films composition 0 ≤ x ≤ 0.8 heart treatment temperature and time. It was found that annealing the heterojunctions at T_a=350 ÷ 380°C for τ_a=5÷8 min in air leads to an increase of photosensitivity in the 0.8÷1.34 μm spectral region. The detectivity, open circuit photovoltage and short circuit photocurrent density for heterojunctions p-Si/Cd_0.3Zn_0.7S were D*=(5÷8)•10⁶cm•Hs^1/2•W^-1, V_oc=0.6 V _H I_sc=5.6 mA/cm², respectively.

The effect of the low-temperature annealing (2 hours at 120°C and 2 hours at 200°C) on epitaxial layers of HgCdTe and HgMnTe was investigated. HgCdTe and HgMnTe layers were produced by the liquid-phase epitaxial method. The Hall effect electroconductivity X-ray diffraction before and after annealing were determined. It was shown that low-temperature annealing produces almost no change in electro-physical parameters of HgMnTe layers but about 90% of HgCdTe layers had increased concentration of charge carries or changed conductivity type. After thermal annealing the crystal surface quality of the HgMnTe layers was improved. The layers HgCdTe do not show such a tendency.

In this paper we report on the results of the study of optical properties of Cd_xHg_1-xTe epitaxial layers (EL) grown by the LPE method on Cd_1-xZn_yTe substrates. The values of the band gap of the solid solution forming EL have been obtained from the optical absorption spectra (FTIR) taken in the spectral region of the interband absorption at step-by-step decrease of EL thickness as a result of a chemical etching. In bridge with it the distribution and character of variations in the intensity of lattice vibrations over the layer depth of Cd_xHg_1-xTe / CdZnTe epitaxial structures was investigated. Longitudinal and transverse lattice vibration frequencies of Cd_xHg_1-x-yZn_yTe have been evaluated from the experimental spectra and compared with the theoretically calculated ones within a unit cell version of the random element isodisplacement model. From the comparing ofthe experimental and theoretical results it is possible to draw a conclusion that in immediate neighborhood of the Cd_xHg_1-xTe/Cd_1-yZn_yTe interface the Cd_xHg_1-x-yZn_yTe thin layer is formed under the certain conditions during the EL growth process i.e., zinc atoms in given EL area is necessary to consider not as an impurity atoms but as the components of the cationic sublattice.

Methods and objectives of plasma and chemical treatments of thin polyimide (Pt) coatings used as "sacrificial" layers in microbolometer processing have been analysed. Physical and chemical effects and mechanisms of surface plasma and chemical treatment of P1 layers and their anisotropic plasma etching with given wall sloping angles and from a gap have been integrated. Revealed mechanisms enabled to optimize P1 plasma and chemical treatment parameters in processing of microbolometer matrices of sizes 2x48, 160x120 and 320x240 pixels.

Modeling of crystal growth processing in CdZnTe system by physical transport of solid solution components in inert gas are discussed. The model allow to calculate the composition of a single crystal of solid solution Cd_1-xZn_xTe, growth by physical vapor transport or the parameters of vapor phase source with the purpose of obtaining the preset composition of a single crystal of a solid solution.

The processes of photochemical reorganization of deep levels of the photoactive centers in films CdS_1-xSe_x (0 ≤ x ≤ 0.8) prepared onto molybdenum substrates by the method of electrochemical deposition were investigated. It is established that thermal annealing of investigated films in air at T_a=380 ÷400°C for τ_a=7÷8 min leads to occurrence of new longwavelength maximum in the photosensitivity spectrum at λ=0.95-1.15 μm (depending on the selenium content) which is due to oxygen-containing photoactive centers forming at disintegration of (V_Cd-Cd_i)⁺ pairs. The mechanism of formation and disintegration of donor-acceptor pairs have been proposed and basic parameters of complex centers formed at thermal annealing were determined by the method of photocapacitance and photoconductivity spectroscopy.

The effect of doping by rare earth elements (REE) such as Gd, Ho and Dy at N_REE≈0≈10^-1 at. % on initial, as well as sensibiized IR-photosensitivity in the crystals of layered semiconductor n-InSe have been investigated. It is shown that dependence of the initial and sensibilized IR-photosensitivity on the level of doping by REE in investigated InSe crystals is caused by dependence of a degree of spatial heterogeneity of a crystal, energy depth of shallow α-sticking levels and slow r-centers of recombination, and also densitity of shallow α-sticking levels on N_REE.

The analysis of dynamics of self-heating and electrical signals in pulse biased microbolometers connected in different modes (constant voltage and constant current modes and also Wheatstone bridge) is presented. Analytical expressions for determination of thermal parameters (thermal time constant heat capacitance and thermal conductance) of thermoresistive microbolometers applicable under significant heating are derived. The experimental results are in good agreement with the theoretical analytical dependences.

Influence of simulating factors of nuclear explosion and proton irradiation on photo-electric properties of photodiodes on the basis of indium selenide have been investigated. It is established that pulse gamma irradiation and a pulse neutron irradiation results in improvement of photo-electric characteristics of researched photodiodes. It is shown that big fluences of the neutron irradiation facilitate process of formation of complexes in an interlaminar space of the layered indium selenide and as a result photo-electric parameters ofphotodiodes a little worsen.

For the comparison of the efficiency of the samples of the aerial thermal imaging equipment it is advisable to use the maximum effective productivity maximized (by carrier height) area which is scanned per unit of time with the ground resolution no worse than the set value. The design procedure of this figure of merit is presented in this report.

According to the results of tests of thermal imaging device the IR signature of observation object is restructured into fragments that form its video image. The recognition range for the normalized conditions is determined as the detection range of video image fragments which are replaced by their equivalent test patterns.

We describes of objects having different dimensions and the forms. This method is based on calculation of a measure "differences" pixels of images from background formations. We used method of mask for scanning and calculations of attributes ofpixels. "Differences" calculated according to the central and neighbour parts ofa mask. Results of detection of objects of air-conditions are represented. The comparative data of efficiency of a method by criterion of probability of a false alarm are resulted at use of masks of various dimensions and the form.

Foundation principles of multichannel real-time information processing system which is solving a problem of automatic object tracking are considered in this work. Image processing algorithms which are used for three-channel system foundation and optimally approaching for system core-Microprocessor Neuro Matrix NM6403 are realized. Information processing is accomplished with using of Hopfield neural network one 384x288 frame processing time is about 100...140 ms.

The example of the digital hardware-and-software complex consisting of the multi-element matrix sensor the personal computer along with the installed special card AMBPCI is described. The problems of elimination socalled fixed pattern noise (FPN) are considered. To improve current imaging the residual FPN is represented as a multiplicative noise. The wavelet-based de-noising algorithm using sets of noisy and non-noisy data of images is applied.

Formation and distribution of radiating defects as well as behaviour of mobility in monocrystalline samples of indium selenide with electron concentration 5•10¹⁴÷1•10¹⁶ cm^-3 have been investigated at an irradiation by gamma-quanta (with doze 10⁷ and 10⁸ R) and electrons with energy 25 MeV (with fluence 10¹⁵ e/cm²).

A comparative analysis of methods of determination of irradiance values in the plane of location of sensitive elements (SE) of detectors in measuring installations containing an absolutely black body (ABB) was carried out.

Methods of measuring relative spectral responsivity of an exemplary photodetector in 2-14 μm spectral range with the help of an absolutely black body and spectral filters are discussed.

Possibility of the use of thermal radiation ofthe mouth cavity ofthe operator for calibration of infrared pyrometers in field conditions is discussed. On the basis ofexperimental results errors of such method ofcalibration are evaluated.

The report deals with the purpose operational conditions and technical characteristics of unified series of fast infrared objectives designed at FGUP "NPO GIPO" the objectives exhibit high optical quality and improved properties in mass and overall dimension characteristics. The objectives are constructed using aspherical and kinoform optical elements. Information is given concerning laser means designed at FGUP "NPO GIPO" for measurement of infrared objective parameters. As an example temperature-frequency response are presented for some of the considered objectives mounted in thermal vision devices.

The optical filter for 8-12 microns spectral range on the base of MCT epilayer grown by Metal Organic Chemical Vapor Deposition (MOCVD) has been investigated. The CdTe mole fraction in Cd_xHg_1-xTe equals x=0.24. The single-layer antireflection coatings for 10 μm peak wavelength have been deposed on the both sides of the filter. Transmission in 8-12 μm spectral range exceeds 70%. Transmission at 7 μm is of 40%, at 6 μm-10%, at 5 μm-less than 2%.

The present paper represents in detail the complex approach to creating industrial technology of production of polymeric optical components: information has been given on optical polymeric materials, automatic machines for injection moulding, the possibilities of the Moldflow system (the AB "Universal" company) used for mathematical simulation of the technological process of injection moulding and making the moulds.

Design results of one- and two-range antireflecting coatings, spectrum splitting, dichroic coatings and high-reflection mirrors for the thermal imaging devices of the new generation are presented in this report.

The investigation of α-Ag₂Te thin films optical properties by reflection and transmission spectra in IR-range are carried out. In absorption spectra there is an area (0.08÷0.056 eV) of free carriers absorption with the sharp increasing of the absorption constant. The fine structure of absorption with peak at 0.09 eV and half-width 0.0075 eV connected with absorption of impurity transition by a valence band-small-sized donor is found. For the first time at room temperature in experimental reflection spectrum R (λ) of α-Ag₂Te behind a plasma minimum (1050 cm^-1) are detected two further minimum (760cm^-1 and 500 cm^-1) stipulated by interaction of plasmons and long-wave longitudinal optical phonons. In the proper absorption region α (λ) spectrum presents the narrow sharp peak with half-width 0.03eV and steep slope to the short-wave. The indicated features of α-Ag₂Te thin films optical spectrums allow considering this films as a perspective material for IR optical filters manufacturing.

At present, search and creation of means for protecting photodetective devices and visual human organs against high power laser radiation is one of vital tasks for researchers designing opto-electronic devices and systems of various purposes. FGUP "NPO GIPO" possesses narrowband hologram filters (Notch filters) production technology which enables to design unique optical filters and to product in serial quantity the standard ones with high technical characteristics. These filters exhibit high beam damage threshold and make available the effective suppression of laser radiation (up to 7 orders) with high transmittance value outside the notch (up to 90%); they may have either one or simultaneously several nothces in a region of 0.4-1.5 μm. Notch-filters can be made both on plane surfaces and on the convex and concave ones with diameters up to 80 mm. The report presents layouts for recording and certifying filters as well as technical characteristics of some filters at different wavelengths.