7 June 2005 EBIC characterization of HgCdTe based photoconductive elements
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.629033
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
Investigations of Hg0.22Cd0.78Te based photoconductive elements have been carried out in the Electron Beam Induced Current (EBIC) mode of the scanning electron microscope. Distributions of current induced by a focused e-beam in the elements are measured as a function of beam position. Fitting the measured distributions by calculated ones allows to estimate values of diffusion length and of recombination velocity on the lateral edges of elements associated with defects induced due to ion milling. It is shown that besides the diffusion length and recombination velocity measurements such investigations allow to reveal the extended recombination defects of micron size.
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Oleg V. Smolin, Eugeny V. Susov, Eugene B. Yakimov, "EBIC characterization of HgCdTe based photoconductive elements", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.629033; https://doi.org/10.1117/12.629033
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