7 June 2005 Epitaxial photosensitive Pb1-xSnxSe(In)/PbSe1-xSx heterojunctions obtained in the ultrahigh vacuum
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628673
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
Photosensitive isoperiodical heterojunctions (HJ) Pb1-xSnxSe(In)/PbSe1-xSx were obtained in the ultrahigh vacuum (≤3÷5•10-7 Pa) at quasi-equilibrium conditions by the method of the "hot wall" in the unified technological cycle on substrates BaF2. In structural relation HJ components are ideally coordinated pair for the epitaxy. Volt-ampere and spectral characteristics of the HJ were recorded. Straight branch of the volt-ampere characteristics satisfies to the exponential law J=J0exp (eU/βκT) at small displacements. At 77 K the coefficient β changes in the interval 1.5÷2 that is typical for the generation-recombination mechanism of the current leakage through the region of the space charge. Maximum photosensitivity was observed at λmax=12.0 μm. The increase of the temperature ofthe HJ manufacture leads to the shift of the photosensitivity maximum to the short-wave region that is explained by the noticeable tin diffusion from the ground layer to the growing layer and as a result the HJ acquires characteristics of the varyzone structure.
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Eldar Yu. Salaev, Eldar Yu. Salaev, A. M. Nazarov, A. M. Nazarov, S. I. Gadjieva, S. I. Gadjieva, } "Epitaxial photosensitive Pb1-xSnxSe(In)/PbSe1-xSx heterojunctions obtained in the ultrahigh vacuum", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628673; https://doi.org/10.1117/12.628673
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