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7 June 2005 Influence of ionized radiation on anisotropy of electric properties of indium selenide
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628924
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
Formation and distribution of radiating defects as well as behaviour of mobility in monocrystalline samples of indium selenide with electron concentration 5•1014÷1•1016 cm-3 have been investigated at an irradiation by gamma-quanta (with doze 107 and 108 R) and electrons with energy 25 MeV (with fluence 1015 e/cm2).
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. A. Askerov and V. I. Gadzhieva "Influence of ionized radiation on anisotropy of electric properties of indium selenide", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628924
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