7 June 2005 Influence of ionizing radiation on photodiodes having a thermoelectric cooler and based on indium selenide
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628904
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
Influence of simulating factors of nuclear explosion and proton irradiation on photo-electric properties of photodiodes on the basis of indium selenide have been investigated. It is established that pulse gamma irradiation and a pulse neutron irradiation results in improvement of photo-electric characteristics of researched photodiodes. It is shown that big fluences of the neutron irradiation facilitate process of formation of complexes in an interlaminar space of the layered indium selenide and as a result photo-electric parameters ofphotodiodes a little worsen.
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K. A. Askerov, V. I. Gadzhieva, D. Sh. Abdinov, "Influence of ionizing radiation on photodiodes having a thermoelectric cooler and based on indium selenide", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628904; https://doi.org/10.1117/12.628904
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