7 June 2005 Mathematical modelling of the processes of crystal growth in CdZnTe by physical transport in inert gas
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628868
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
Modeling of crystal growth processing in CdZnTe system by physical transport of solid solution components in inert gas are discussed. The model allow to calculate the composition of a single crystal of solid solution Cd1-xZnxTe, growth by physical vapor transport or the parameters of vapor phase source with the purpose of obtaining the preset composition of a single crystal of a solid solution.
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A. A. Melnikov, A. A. Melnikov, N. A. Kulchitsky, N. A. Kulchitsky, A. N. Kulchitsky, A. N. Kulchitsky, } "Mathematical modelling of the processes of crystal growth in CdZnTe by physical transport in inert gas", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628868; https://doi.org/10.1117/12.628868
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