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7 June 2005 Peculiarities of graded-gap photodiodes with nonmonotonic coordinate profile of the band gap
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628909
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
The paper theoretically investigates the peculiarities of graded-gap photodiodes in which the band gap linearly increases from the metallurgical boundary of p-n junction. On the basis of derived analytical expression for the photocurrent the spectral distribution of quantum efficiency of photoconversion and its dependence on the band gap gradient and surface recombination velocity are analysed. Numerical calculations are carried out as applied to a thin layer photodiode based on the CdHgTe graded-gap solid solution. The advantages of this type of graded-gap photodiodes over their homoband analogues are discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bogdan S. Sokolovsky, Volodymyr K. Pysarevsky, Andriy P. Vlasov, and Grygoriy A. II'chuk "Peculiarities of graded-gap photodiodes with nonmonotonic coordinate profile of the band gap", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628909
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