7 June 2005 Photoelectric properties of films A2B2C6 deposited from a solution
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628678
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
In the present work the photochemical reaction in Cd1-xZnxS(Se) films considered depending on technological modes of their deposition and heat treatment (HT). In Cd1-xZnxS(Se) films the formation of Cdi-Cdi, Zni-Zni, VSe-Zni etc. associations provides occurrence of optical active electronic states carried in an interval of energy 0.3-0.6 eV allows using of a Cd1-xZnxS(Se) films for creation on their basis non-cooled photodetectors in the IR-range. At illumination by light of λ=0.95 μm were observed anomalous photoconductivity and photomemory phenomenon connected with existence in them defects with metastable states which concentration can be operated depending on structure deposition and heat treatment (HT) mode and limits by tunnel transitions of no basic located electrons and holes between r- and s-centres. In Cd1-xZnxS(Se) films after HT on air during 10-15 minutes was observed the photochemical reaction with activation energy of 0.17-0.21 eV representing disintegration process of donor-acceptor pairs consisting of the r-centres and the Cdi, Zni donors at illumination with light of λ=1.25 μm and caused by precipitation conditions and HT.
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A. Sh. Abdinov, M. A. Jafarov, E. F. Nasirov, "Photoelectric properties of films A2B2C6 deposited from a solution", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628678; https://doi.org/10.1117/12.628678
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