7 June 2005 Photoelectric properties of isotype heterojunctions n-InSe< REE >/n-CuInSe2 in visible and near-IR region
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628683
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
By the method of landing to optical contact isotype n-InSe< REE >/n-CuInSe2 heterojunctions with percentage of introduced impurity NREE=0; 10-5; 10-4; 10-3; 10-2 and 10-1 at. % rare-earth elements (REE) of gadolinium, holmium and dysprosium have been created. Their photoelectric properties in photoconductivity, photo-e.m.f. and photovoltaic modes have been investigated at different orientations of incident light relative to contacting components and temperatures (at 77 and 300 K). Appreciable dependence of the basic photo-electric characteristics of investigated structures on NREE have been found out and mechanisms for their explanations have been offered.
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A. Sh. Abdinov, A. Sh. Abdinov, R. F. Babayeva, R. F. Babayeva, R. M. Ismayilov, R. M. Ismayilov, G. H. Eyvazova, G. H. Eyvazova, } "Photoelectric properties of isotype heterojunctions n-InSe< REE >/n-CuInSe2 in visible and near-IR region", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628683; https://doi.org/10.1117/12.628683
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