7 June 2005 Photosensitivity of p-Si/n-Cd1-xZnxS heterojunctions in visible and near IR region of spectrum
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628695
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
p-Si/n-Cd1-xZnxS heterojunction are prepared by the electrodeposition method. Electrical and photoelectrical measurements have been carried out on heterojunctions having varying Cd1-xZnxS films composition 0 ≤ x ≤ 0.8 heart treatment temperature and time. It was found that annealing the heterojunctions at Ta=350 ÷ 380°C for τa=5÷8 min in air leads to an increase of photosensitivity in the 0.8÷1.34 μm spectral region. The detectivity, open circuit photovoltage and short circuit photocurrent density for heterojunctions p-Si/Cd0.3Zn0.7S were D*=(5÷8)•106cm•Hs1/2•W-1, Voc=0.6 V H Isc=5.6 mA/cm2, respectively.
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H. M. Mamedov, H. M. Mamedov, H. A. Hasanov, H. A. Hasanov, } "Photosensitivity of p-Si/n-Cd1-xZnxS heterojunctions in visible and near IR region of spectrum", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628695; https://doi.org/10.1117/12.628695
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