7 June 2005 The effect of low-temperature annealing on the electrical and structural properties of epitaxial layers of CMT and MMT
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628699
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
The effect of the low-temperature annealing (2 hours at 120°C and 2 hours at 200°C) on epitaxial layers of HgCdTe and HgMnTe was investigated. HgCdTe and HgMnTe layers were produced by the liquid-phase epitaxial method. The Hall effect electroconductivity X-ray diffraction before and after annealing were determined. It was shown that low-temperature annealing produces almost no change in electro-physical parameters of HgMnTe layers but about 90% of HgCdTe layers had increased concentration of charge carries or changed conductivity type. After thermal annealing the crystal surface quality of the HgMnTe layers was improved. The layers HgCdTe do not show such a tendency.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. M. Nesmelova, I. M. Nesmelova, V. N. Ryzhkov, V. N. Ryzhkov, G. G. Gumarov, G. G. Gumarov, V. Y. Petukhov, V. Y. Petukhov, V. A. Andreev, V. A. Andreev, } "The effect of low-temperature annealing on the electrical and structural properties of epitaxial layers of CMT and MMT", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628699; https://doi.org/10.1117/12.628699
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