16 June 2005 Application of PGSD (proximity gap suction development) to 70 nm NAND mask fabrication
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Proceedings Volume 5835, 21st European Mask and Lithography Conference; (2005) https://doi.org/10.1117/12.637275
Event: 21st European Mask and Lithography Conference, 2005, Dresden, Germany
Abstract
CD error caused by loading effect is becoming a significant issue in mask fabrication. At the same time, quantification method of CD error caused by loading effect has not been established in many cases because it is very difficult to measure the error according to various coverages. In previous studies, we presented the development equipment named PGSD (Proximity Gap Suction Development). PGSD can reduce loading error of development process by using of nozzles to spout developer and suck in dirty developer. However, in the case of using PGSD for development process, CD error caused by loading effect seems to still remain. In this paper, we propose a new method to quantify the error caused by loading effect, and estimate the development-induced error out of total CD error. We evaluated 70 nm NAND mask by investigating the correlation between CD and coverage. Moreover, we discuss the residual CD error excluding the loading effect.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideaki Sakurai, Hideaki Sakurai, Tooru Shibata, Tooru Shibata, Masamitsu Itoh, Masamitsu Itoh, Kotaro Ooishi, Kotaro Ooishi, Hideo Funakoshi, Hideo Funakoshi, Yoshiki Okamoto, Yoshiki Okamoto, Shigemi Oono, Shigemi Oono, Masatoshi Kaneda, Masatoshi Kaneda, Shigenori Kamei, Shigenori Kamei, Naoya Hayashi, Naoya Hayashi, } "Application of PGSD (proximity gap suction development) to 70 nm NAND mask fabrication", Proc. SPIE 5835, 21st European Mask and Lithography Conference, (16 June 2005); doi: 10.1117/12.637275; https://doi.org/10.1117/12.637275
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