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16 June 2005 Defect printability and inspectability of halftone masks for the 90nm and 70nm node
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Proceedings Volume 5835, 21st European Mask and Lithography Conference; (2005) https://doi.org/10.1117/12.637328
Event: 21st European Mask and Lithography Conference, 2005, Dresden, Germany
Abstract
This paper presents first results of a defect printability study for the 70nm and 90nm technology. Two 6% halftone test masks with dense line/space (l/s) and contact hole (CH) structures, containing programmed defects were exposed at different production illumination conditions. The resultant data was compared with respect to the mask defect sizes, the Aerial Image Measurement System (AIMS) values and the mask defect inspection sensitivity. As expected over-and under-sized features exhibity the highest printability and AIMS value intensity deviation. No difference was found in the lithographic behavior of dark and clear extension. Additionally (to the determination of the print critical AIMS values) the programmed defect masks were used for the evaluation of a KLA 52x inspection system. The performances of two detection pixels named P125 and P90 in combination with two inspection modes named die-to-die transmission (d2dT) and die-to-die reflective (d2dR) were investigated on 90nm and 70nm dense l/s and contact hole areas with respect to the print results. Over and under-sized small dense structures as well as dark and clear defects centered in a clear or dark structure are challenging for the new inspection tool. For dense contact hole arrays d2dR shows a better performance than d2dT.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karin Eggers, Karsten Gutjahr, Milko Peikert, Dieter Rutzinger, Ralf Ludwig, Michael Kaiser, Arndt Durr, and Jan Heumann "Defect printability and inspectability of halftone masks for the 90nm and 70nm node", Proc. SPIE 5835, 21st European Mask and Lithography Conference, (16 June 2005); doi: 10.1117/12.637328; https://doi.org/10.1117/12.637328
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