16 June 2005 Mask modeling in the low k1 and ultrahigh NA regime: phase and polarization effects (Invited Paper)
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Proceedings Volume 5835, 21st European Mask and Lithography Conference; (2005) https://doi.org/10.1117/12.637285
Event: 21st European Mask and Lithography Conference, 2005, Dresden, Germany
Abstract
This paper reviews state of the art mask modeling for optical lithography. Rigorous electromagnetic field (EMF) simu-lation of light diffraction from optical masks is compared to the traditional assumption of an infinitely thin mask, the so called Kirchhoff approach. Rigorous EMF simulation will be employed to analyze mask polarization phenomena which become important in the ultrahigh NA regime. Several important lithographic phenomena, which can be explained only with rigorous EMF simulation, are discussed. This includes the printability of small assist features, intensity imbalanc-ing for alternating PSM, and process window deformations. The paper concludes with a discussion on material issues and algorithmic extensions which will be necessary for an accurate modeling of future mask technology.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Erdmann, Andreas Erdmann, } "Mask modeling in the low k1 and ultrahigh NA regime: phase and polarization effects (Invited Paper)", Proc. SPIE 5835, 21st European Mask and Lithography Conference, (16 June 2005); doi: 10.1117/12.637285; https://doi.org/10.1117/12.637285
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