16 June 2005 Production challenges of making EUV mask blanks
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Proceedings Volume 5835, 21st European Mask and Lithography Conference; (2005) https://doi.org/10.1117/12.637335
Event: 21st European Mask and Lithography Conference, 2005, Dresden, Germany
Abstract
Mask Blanks for EUV Lithography require a lot of new properties and features compared to standard Chrome-on-Glass blanks. Starting from completely new low thermal expansion substrate materials with significantly improved surface quality over multilayer coatings for EUV reflection, buffer layers, up to new absorber layers with improved dry etching and inspection properties. In addition highly sophisticated metrology is needed for further improvements and process control. New polishing and cleaning technologies, improved sputter technology and updated metrology enable us to routinely produce EUVL mask blanks meeting already many of the ITRS roadmap requirements. Our improvements on low defect EUV multilayer coatings as well as on our metrology methods will be elucidated and some aspects of this will be explained in detail. In addition a new design of EUVL absorber material with experimental results will be reported, including optical performance at inspection wavelength.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Holger Seitz, Holger Seitz, Frank Sobel, Frank Sobel, Markus Renno, Markus Renno, Thomas Leutbecher, Thomas Leutbecher, Nathalie Olschewski, Nathalie Olschewski, Thorsten Reichardt, Thorsten Reichardt, Ronny Walter, Ronny Walter, Hans Becker, Hans Becker, Ute Buttgereit, Ute Buttgereit, Gunter Hess, Gunter Hess, Konrad Knapp, Konrad Knapp, Christian Wies, Christian Wies, Rainer Lebert, Rainer Lebert, "Production challenges of making EUV mask blanks", Proc. SPIE 5835, 21st European Mask and Lithography Conference, (16 June 2005); doi: 10.1117/12.637335; https://doi.org/10.1117/12.637335
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