1 July 2005 A linearly tunable capacitor fabricated by the post-CMOS process
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Abstract
This work investigates the fabrication of a linearly tunable capacitor using the standard CMOS (Complementary Metal-Oxide Semiconductor) process and a maskless post-process. This tunable capacitor is composed of a comb-drive actuator, a parallel capacitor and supported beams. The comb-drive actuator is employed to change the position of the movable electrode plate in the parallel capacitor, such that the overlap area between the two plates in the parallel capacitor is changed. The capacitance of the tunable capacitor is a linear variation. The benefits of the pos-process are compatible with the CMOS process and etching without mask. The post-process has two main steps. One is the use of phosphoric acid to remove the metal from sacrificial layers and etch holes. The other step employs RIE (reactive ion etching) to etch the passivation layer over the pads. The experimental results show a capacitance of 500 fF, and 50% tuning range at 20 V.
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Ching-Liang Dai, Ching-Liang Dai, Mao-Chen Liu, Mao-Chen Liu, Yu-Ren Li, Yu-Ren Li, } "A linearly tunable capacitor fabricated by the post-CMOS process", Proc. SPIE 5836, Smart Sensors, Actuators, and MEMS II, (1 July 2005); doi: 10.1117/12.607723; https://doi.org/10.1117/12.607723
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