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1 July 2005 Amorphous Si deposition method thanks traditional PECVD insulator equipments for seed layers performing
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Proceedings Volume 5836, Smart Sensors, Actuators, and MEMS II; (2005) https://doi.org/10.1117/12.608282
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain
Abstract
This paper reports a new method of amorphous layer deposition thanks traditional PECVD insulators equipments for seed layer performing. The main application of this method is the realisation of seed layer for EPIPOLY process without using LPCVD furnace. Amorphous layers are obtained thanks to traditional PECVD insulators equipment, AMT 5000, which allows to prevent LPCVD furnace from cross contamination. Furthermore AMT 5000 as single wafer equipment fits much better in ato research using. The major interest of the method is its compatibility with traditional microelectronic process and it involves very common PECVD equipment.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. De Sagazan, E. Prodhome, D. Gaudin, M. Denoual, P. Guil, and O. Bonnaud "Amorphous Si deposition method thanks traditional PECVD insulator equipments for seed layers performing", Proc. SPIE 5836, Smart Sensors, Actuators, and MEMS II, (1 July 2005); https://doi.org/10.1117/12.608282
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