1 July 2005 An integrated self-masking technique for providing low-loss metallized RF MEMS devices in a polysilicon only MEMS process (Invited Paper)
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Abstract
A novel masking technique that enables the complex patterning of metal on any layer of a released MEMS chip is demonstrated. This technique enables a polysilicon only MEMS process to create low-loss RF devices. To illustrate the advantages of post-release metallization, in a polysilicon only MEMS process, a rotating MEMS tunable capacitor that provides a wide and linear tuning range is presented. The core of the design comes from high yield, mechanically proven gear designs from Sandia’s SUMMiT design library. Significant alterations were made to the gear structure to create the final device. Preliminary tests show device capacitance ratios of 1.8:1, with linear tuning. Increased metal deposition to reduce the device air gap, can produce a capacitance ratio over 6:1.
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John M. Wilson, John M. Wilson, Rizwan Bashirullah, Rizwan Bashirullah, David P. Nackashi, David P. Nackashi, David A. Winick, David A. Winick, Paul D. Franzon, Paul D. Franzon, } "An integrated self-masking technique for providing low-loss metallized RF MEMS devices in a polysilicon only MEMS process (Invited Paper)", Proc. SPIE 5836, Smart Sensors, Actuators, and MEMS II, (1 July 2005); doi: 10.1117/12.607592; https://doi.org/10.1117/12.607592
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