Thermoelectric properties of bismuth telluride thin films deposited by radio frequency magnetron sputtering

J. Tan; K. Kalantar-zadeh; W. Wlodarski; S. Bhargava; D. Akolekar; A. Holland; G. Rosengarten

doi:10.1117/12.609819

1 July 2005 Thermoelectric properties of bismuth telluride thin films deposited by radio frequency magnetron sputtering

J. Tan, K. Kalantar-zadeh, W. Wlodarski, S. Bhargava, D. Akolekar, A. Holland, G. Rosengarten

Proceedings Volume 5836, Smart Sensors, Actuators, and MEMS II; (2005) https://doi.org/10.1117/12.609819
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain

Abstract

This paper reports the thermoelectric properties of intrinsic N-type bismuth telluride (Bi₂Te₃) thin films (2.5-10 μm thickness). These films were deposited using radio frequency (R.F.) magnetron sputtering. These properties include; Seebeck coefficient and electrical resistivity at different temperatures. It has been observed that the Seebeck coefficient and electrical resistivity of thin films are approximately -150 μV/°C and 4 x 10^-5 ohm-m at room temperature, respectively. The maximum value of Seebeck coefficient of approximately -287 μV/°C was observed at 54 °C for a film thickness of 9.8 μm. The microstructural characteristics of the thin films were investigated using Scanning Electron Microscopy and X-Ray Diffraction analysis. It was observed that the thicker the Bi₂Te₃ film, the larger the grain size. The observed grain sizes were approximately 900 nm and 1500 nm for Bi₂Te₃ film of 2.6 μm and 9.8 μm thicknesses, respectively. The XRD analysis indicated the presence of rhombohedral (Bi₂Te₃) crystal structures.

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J. Tan, K. Kalantar-zadeh, W. Wlodarski, S. Bhargava, D. Akolekar, A. Holland, and G. Rosengarten "Thermoelectric properties of bismuth telluride thin films deposited by radio frequency magnetron sputtering", Proc. SPIE 5836, Smart Sensors, Actuators, and MEMS II, (1 July 2005); https://doi.org/10.1117/12.609819

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