Paper
30 June 2005 DC modeling of PN integrated cross varactors
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Proceedings Volume 5837, VLSI Circuits and Systems II; (2005) https://doi.org/10.1117/12.608279
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain
Abstract
In this paper models for the capacitance of cross integrated varactors based in the PN junction are presented. Three different approximations are assumed, in order to reproduce the measured results of the capacitance. The relative error with the measured capacitance is under 10% in all cases.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benito Gonzalez, Jose Antonio Perez, Sunil L. Kemchandani, Amaya Goni-Iturri, Javier del Pino, and Javier Garcia "DC modeling of PN integrated cross varactors", Proc. SPIE 5837, VLSI Circuits and Systems II, (30 June 2005); https://doi.org/10.1117/12.608279
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KEYWORDS
Capacitance

Diffusion

Capacitors

Reverse modeling

Integrated modeling

Picosecond phenomena

Semiconductors

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