Paper
30 June 2005 Emitter degenerated voltage controlled oscillators for millimeter wave operation
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Proceedings Volume 5837, VLSI Circuits and Systems II; (2005) https://doi.org/10.1117/12.608644
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain
Abstract
Three oscillators are presented for operation in the 23-25 GHz range where consideration is given to noise, frequency, and power effects of different tank sizes and topologies. The circuits in question employ inductor based tanks with negative resistance provided through an emitter degenerated cross-coupled pair, and use emitter degeneration and inductive peaking to provide bandwidth extension within the single stage output buffers. These circuits are implemented in a 0.18 μm SiGe BiCMOS technology with a 54 GHz ft, and use single device stacks to achieve low voltage operation with VDD as low as 900 mV, while consuming as little as 2.25 mW of power.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian Welch and Kevin Kornegay "Emitter degenerated voltage controlled oscillators for millimeter wave operation", Proc. SPIE 5837, VLSI Circuits and Systems II, (30 June 2005); https://doi.org/10.1117/12.608644
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KEYWORDS
Oscillators

Resistance

Resonators

Capacitance

Transistors

Inductance

Extremely high frequency

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