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30 June 2005 Ring oscillator behavior after oxide breakdown
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Proceedings Volume 5837, VLSI Circuits and Systems II; (2005) https://doi.org/10.1117/12.608245
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain
Abstract
The influence of the oxide hard breakdown (HBD) path location along the channel in nMOSFETS on the performance and power consumption of a five stages ring oscillator has been evaluated. A simple MOSFET transistor model which takes into account the oxide BD has been used to do the analysis. The results show that in some cases, after oxide BD, the ring oscillator still operates but the circuit could fail due to higher consumption.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Fernandez, R. Rodriguez, M. Nafria, and X. Aymerich "Ring oscillator behavior after oxide breakdown", Proc. SPIE 5837, VLSI Circuits and Systems II, (30 June 2005); https://doi.org/10.1117/12.608245
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