7 July 2005 Light emitting devices based on nanostructured semiconductors
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Abstract
Light emitting devices based on high-efficiency photoluminescence (PL) fluorescent nanocrystals have been investigated in terms of the generation of light from the structure using a variety of deposition methods. An automated modified layer-by-layer (LbL) self-assembly technique has been employed to produce multilayers of thiol-capped red fluorescing CdTe nanocrystals. Indium-tin-oxide (ITO) and aluminium electrodes were used as the electrodes. Morphological characterization was carried out through Schottky field effect (SFEG) SEM and atomic force microscopy (AFM). The structures built presented clear red electroluminescence (EL) to the naked eye. Turn on voltages were found to be in the range of 3-6 volts while the onset current was in the order of tens of microamperes. The role of structure homogeneity, the presence of pinholes and lifetime extension were features addressed during this investigation. Samples with a lifetime of continuous operation in air longer than 60 minutes and highly stable EL spectra were achieved; EL was visible to the unaided eye, although the brightness was still below the commercial standards and has not yet been qualified.
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D. E. Gallardo, C. Bertoni, S. Dunn, "Light emitting devices based on nanostructured semiconductors", Proc. SPIE 5840, Photonic Materials, Devices, and Applications, (7 July 2005); doi: 10.1117/12.608340; https://doi.org/10.1117/12.608340
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