7 July 2005 Porous silicon-based notch filters and waveguides
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Abstract
We present an experimental work on porous silicon-based optical devices. Notch filters and planar waveguides are fabricated and characterized. Three different types of filters are shown, the first one is a stop band filter in the 1.5 micron region, where improvements have been performed (smoothing of the index profile, apodization and index matching). The second is a double Notch filter in the IR range, which blocks two different frequencies. Finally Notch filters in the visible range are shown, where porous silicon has been completely oxidized. Double layer waveguides are fabricated and characterized by atomic force microscopy, luminescence and prism coupling techniques. All the results shown are compared with numerical calculations. The photoluminescence changes and the refractive index variations for different annealing times are modeled in terms of oxidation of silicon and slow condensation of the porous structure.
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C. J. Oton, C. J. Oton, E. Lorenzo, E. Lorenzo, N. Capuj, N. Capuj, F. Lahoz, F. Lahoz, I. R. Martin, I. R. Martin, D. Navarro-Urrios, D. Navarro-Urrios, Mher Ghulinyan, Mher Ghulinyan, F. Sbrana, F. Sbrana, Z. Gaburro, Z. Gaburro, Lorenzo Pavesi, Lorenzo Pavesi, } "Porous silicon-based notch filters and waveguides", Proc. SPIE 5840, Photonic Materials, Devices, and Applications, (7 July 2005); doi: 10.1117/12.608231; https://doi.org/10.1117/12.608231
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