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7 July 2005 Solution of the Boltzmann equation for the electron Hall mobility in Ga1-xNxAs
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Proceedings Volume 5840, Photonic Materials, Devices, and Applications; (2005) https://doi.org/10.1117/12.608323
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain
Abstract
The ladder method for solving the linearized Boltzmann equation is developed to deal with a non-parabolic conduction band. This is applied to find the low field Hall mobility of electrons in bulk GaNxAs1-x using the band-anticrossing (BAC) model, which predicts highly non-parabolic energy dispersion relations. Polar optical, acoustic phonon, piezoelectric, ionized impurity, neutral impurity and nitrogen scattering are incorporated. In finding an exact solution to the linearized Boltzmann equation, we avoid the unrealistic assumption of a relaxation time for inelastic scattering via polar optical phonons. Nitrogen scattering is found to limit the electron mobility to values of the order 1000 cm2V-1s-1, in accordance with relaxation time approximation calculations but still an order of magnitude higher than measured values for dilute nitrides. We conclude that the non-parabolicity of the conduction band alone can not account for these low mobilities.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. P. Vaughan and B. K. Ridley "Solution of the Boltzmann equation for the electron Hall mobility in Ga1-xNxAs", Proc. SPIE 5840, Photonic Materials, Devices, and Applications, (7 July 2005); https://doi.org/10.1117/12.608323
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