23 May 2005 Anomalous transport and memory in quantun dot arrays (Invited Paper)
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Proceedings Volume 5843, Fluctuations and Noise in Materials II; (2005) https://doi.org/10.1117/12.609279
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States
Abstract
We address anomalous transport phenomena in arrays of semiconductor nanocrystals (quantum dots): Transient power-law decay of current as a response to a step in large bias voltage applied across the array, as well as memory effects observed after successive applications of the bias voltage. A novel phenomenological model of transport in such systems is proposed, capable of rationalizing both anomalous transport and memory. The model describes electron transport by a stationary Levy process of transmission events and therefore requires no time dependence of system properties. The long tail in the waiting time distribution gives rise to a nonstationary response in the presence of a voltage pulse. Noise measurements agree well with the predicted non-Poissonian fluctuations in current. We briefly discuss possible microscopic mechanisms that could cause the anomalous statistics in transmission.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitry S. Novikov, Dmitry S. Novikov, Marija Drndic, Marija Drndic, Leonid S. Levitov, Leonid S. Levitov, Marc A. Kastner, Marc A. Kastner, Mirna V. Jarosz, Mirna V. Jarosz, Moungi G. Bawendi, Moungi G. Bawendi, } "Anomalous transport and memory in quantun dot arrays (Invited Paper)", Proc. SPIE 5843, Fluctuations and Noise in Materials II, (23 May 2005); doi: 10.1117/12.609279; https://doi.org/10.1117/12.609279
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