Real-time electron counting studies on charge fluctuations in a semiconductor quantum dot

Wei Lu

doi:10.1117/12.609341

23 May 2005 Real-time electron counting studies on charge fluctuations in a semiconductor quantum dot (Invited Paper)

Wei Lu

Proceedings Volume 5843, Fluctuations and Noise in Materials II; (2005) https://doi.org/10.1117/12.609341
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States

Abstract

We present time-domain electron counting studies on charge fluctuations in a mesoscopic system. In this measurement, a radio-frequency single-electron transistor (RF-SET) acting as a fast electrometer is capacitively coupled to a quantum dot (QD) electrostatically defined in a GaAs/AlGaAs heterostructure. Random telegraph signals (RTSs) were observed on the RF-SET and were interpreted as resulting from individual electrons tunneling into/out of the QD hence switching the QD charge state between N and N+1 electrons near the charge degeneracy point. Periodic behavior of the switching events is observed as the number of average electrons in the electron box is decreased one by one. The occupation time of the excess electron is directly measured and changes from a few microseconds to a few milliseconds as the tunneling resistance of the QD is increased. Histogram of the occupation time obtained from the time-domain electron counting measurements agrees well with the frequency-domain power spectrum analysis, both suggesting a Poissonian process at the charge degenerate point, in agreement with a model consisting of two charge states. Real time electron counting techniques can play a powerful role in studies on temporal electronic correlations, as well as quantum information processing schemes. Techniques that will improve the charge sensitivity of the RF-SET will also be discussed.

Citation Download Citation

Wei Lu "Real-time electron counting studies on charge fluctuations in a semiconductor quantum dot (Invited Paper)", Proc. SPIE 5843, Fluctuations and Noise in Materials II, (23 May 2005); https://doi.org/10.1117/12.609341

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KEYWORDS

Switching

Resistance

Quantum dots

Amplifiers

Capacitance

Modulation

Lead

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