A physical understanding of the noise performance of MOS transistors for wireless and lightwave applications in the giga-bit regime

R. P. Jindal

doi:10.1117/12.609965

23 May 2005 A physical understanding of the noise performance of MOS transistors for wireless and lightwave applications in the giga-bit regime (Invited Paper)

R. P. Jindal

Author Affiliations +

Proceedings Volume 5844, Noise in Devices and Circuits III; (2005) https://doi.org/10.1117/12.609965
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States

Abstract

Functional requirements for modern narrow-band and wide-band wireless and lightwave communication systems place stringent demands on speed and noise behavior of circuits and devices used to design them. MOS technology in the nanometer regime continues to be the low-cost high-performance workhorse driving innovations for these applications. In this paper, we trace the developments in the modeling of noise in MOS transistors as the device channel lengths shrink by a factor or a thousand from tens of micrometers to tens of nanometers. The impact of scaling on classical noise mechanisms is explained. Also, generation of new noise sources as a result of scaling are also described. This leads to a better physical understanding of the noise behavior of these devices. Methods of eliminating some of these noise sources by suitable choice of materials and modifications in device structure are explained. Application of this understanding to the practical design and layout of low-noise high-performance circuits is illustrated. As a result, the noise performance of MOS devices has improved by almost an order of magnitude making them an ideal choice for low-noise communication electronics design. Research continues as the channel lengths shrink further.

Citation Download Citation

R. P. Jindal "A physical understanding of the noise performance of MOS transistors for wireless and lightwave applications in the giga-bit regime (Invited Paper)", Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); https://doi.org/10.1117/12.609965

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available