23 May 2005 Comparison of 1/f noise in complementary NPN and PNP polysilicon emitter bipolar transistors
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Proceedings Volume 5844, Noise in Devices and Circuits III; (2005) https://doi.org/10.1117/12.609513
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States
Abstract
1/f noise was investigated in a complementary polysilicon emitter bipolar process. Noise measurements were carried out for variable base bias resistance (RS) to analyze how the contribution of each noise source changes as RS is varied. Two noise measurement setups were used to identify different noise sources in the transistors: noise from the base current (SIB), collector current (SIC), and internal resistances (SVr). The coherence for transistors measured in both measurement setups were close to unity, implying a single dominant noise source. SIB had the dominant contribution at lower bias currents. In this case, RS was relatively larger than the input resistance of the transistor. Higher current measurements with a smaller RS showed a dominant contribution from SVr. SIB was modeled as a combination of the minority carrier diffusion fluctuations in the monosilicon and polysilicon emitter, and tunneling fluctuations through the interfacial oxide. A combination of the number and diffusion fluctuations of the minority carriers in the base was used to model SIC. It was concluded that mainly originates from the fluctuations in the internal emitter resistance, which was ascribed to the tunneling fluctuations of the majority carriers through the interfacial oxide.
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Md Mazhar Ul Hoque, Zeynep Celik-Butler, Joe Trogolo, Douglas Weiser, Keith Green, "Comparison of 1/f noise in complementary NPN and PNP polysilicon emitter bipolar transistors", Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); doi: 10.1117/12.609513; https://doi.org/10.1117/12.609513
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