Low frequency noise in SOI transistors

Tony Tseng; J. C. S. Woo

doi:10.1117/12.609628

23 May 2005 Low frequency noise in SOI transistors (Invited Paper)

Tony Tseng, J. C. S. Woo

Proceedings Volume 5844, Noise in Devices and Circuits III; (2005) https://doi.org/10.1117/12.609628
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States

Abstract

With the inherent advantages in SOI CMOS technology, minimizing DC and switching floating body effects have enabled high speed digital processors with more than a 25% improvement over bulk silicon CMOS design. Currently, there is a need for a more comprehensive understanding of AC characteristics on SOI CMOS technology for mixed-mode baseband and RF (radio frequency) applications. The objective of this paper is to present a study of unique AC floating body effects and the resultant low-frequency noise overshoot phenomenon in SOI CMOS technology. Further study of their impact on the RF arena will also be discussed.

Citation Download Citation

Tony Tseng and J. C. S. Woo "Low frequency noise in SOI transistors (Invited Paper)", Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); https://doi.org/10.1117/12.609628

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