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23 May 2005 Low frequency noise in SOI transistors (Invited Paper)
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Proceedings Volume 5844, Noise in Devices and Circuits III; (2005)
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States
With the inherent advantages in SOI CMOS technology, minimizing DC and switching floating body effects have enabled high speed digital processors with more than a 25% improvement over bulk silicon CMOS design. Currently, there is a need for a more comprehensive understanding of AC characteristics on SOI CMOS technology for mixed-mode baseband and RF (radio frequency) applications. The objective of this paper is to present a study of unique AC floating body effects and the resultant low-frequency noise overshoot phenomenon in SOI CMOS technology. Further study of their impact on the RF arena will also be discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tony Tseng and J. C. S. Woo "Low frequency noise in SOI transistors (Invited Paper)", Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005);

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