23 May 2005 Low-frequency noise measurements used for semiconductors light active devices
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Proceedings Volume 5844, Noise in Devices and Circuits III; (2005) https://doi.org/10.1117/12.609228
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States
Abstract
Three different sets of semiconductors light active devices were by low frequency noise diagnostic described. In the first set the low frequency noise of 2.3 μm CW GaSb based Laser Diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured. The results of noise measurement in all systems were compared.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiri Vanek, Jiri Vanek, Zdenek Chobola, Zdenek Chobola, Vladimir Brzokoupil, Vladimir Brzokoupil, Jiri Kazelle, Jiri Kazelle, } "Low-frequency noise measurements used for semiconductors light active devices", Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); doi: 10.1117/12.609228; https://doi.org/10.1117/12.609228
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