Noise in carbon nanotube electronics

Derek Kingrey; Philip G. Collins

doi:10.1117/12.609278

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23 May 2005 Noise in carbon nanotube electronics (Invited Paper)

Derek Kingrey; Philip G. Collins

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Proceedings Volume 5846, Noise and Information in Nanoelectronics, Sensors, and Standards III; (2005) https://doi.org/10.1117/12.609278
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States

Abstract

A variety of noise measurements have been accomplished on electronic devices incorporating individual single-walled carbon nanotubes. Noise with a 1/f frequency dependence and noise attributed to two-level fluctuators are independently measured, even when these two components occur simultaneously in the same device. We demonstrate the importance of isolating these two components before attempting quantitative analysis, and then proceed to characterize devices as a function of temperature and processing history. High temperature desorption, surface passivation with polymer, and encapsulation in SiO2 films followed by forming gas annealing are three different process pathways which failed to substantially decrease the noise in these devices. In all of the devices measured, the 1/f noise components are found to only weakly decrease with temperature and to be practically independent of processing history. The two-level fluctuators, on the other hand, appear to be thermally activated and their contribution to the total noise typically increases with different processing steps.

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Derek Kingrey and Philip G. Collins "Noise in carbon nanotube electronics (Invited Paper)", Proc. SPIE 5846, Noise and Information in Nanoelectronics, Sensors, and Standards III, (23 May 2005); https://doi.org/10.1117/12.609278

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